MOCVD Equipment for Recent Developments towards the Blue and Green Solid State
Laser
H. Jürgensen, D. Schmitz, G. Strauch, E. Woelk
AIXTRON AG
M. Dauelsberg, L. Kadinski, Yu. N. Makarov
Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg
This article was received on Sunday, June 2, 1996 and
accepted on Saturday, October 26, 1996. Abstract
For the growth of an electrically pumped lasing nitride emitter, the
development of the MOCVD equipment and the process are mutually dependent. Most
important is the implementation of the rapid temperature changes that are
required between the growth of the different layers of a device structure.
Equally important is to provide a reaction chamber that develops a stable gas
phase at all growth temperatures used in the process. In this paper we will
give insight in the technology and the relationship between processes and
equipment. The development of the reation chamber was supported by mathematical
modeling that formed the basis for the selection of appropriate process
parameters for growth of group-III nitrides. The modeling consists of the
numerical solution of the Navier-Stokes equations coupled with heat transfer
and mass transport of the chemical species. The modeling of radiative heat
transfer takes into account the effect of changing surface radiative
properties. These changes result from the coating of the reactor inner surfaces
during the growth run. Coupled flow dynamics and chemistry including
homogeneous and heterogeneous reactions play an important role for predicting
growth rate distributions on the susceptor area. At the practically used high
temperatures, group-III metalorganics turn out to be almost entirely decomposed
and it is the mass transport of these decomposition products to the growing
layer that is assumed to control the growth rate in accordance with
experimental observations.
