Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and
HVPE
M. Leroux, B. Beaumont, N. Grandjean, Pierre Gibart , J. Massies, J. P. Faurie
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS
This article was received on June 5, 1996 and
accepted on October 24, 1996. Abstract
This work presents an optical characterization by luminescence and reflectivity
of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved
optical spectra are obtained for each growth technique. The luminescence of Mg
doped MOVPE grown GaN is also studied. A Mg acceptor optical depth of ~ 260
meV is obtained.
