The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High
Speed Rotating Disk Reactor
Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall
EMCORE Corporation
This article was received on June 2, 1996 and
accepted on October 24, 1996. Abstract
. In the past year, several organizations have fabricated reliable,
high-brightness LEDs from III-Nitride materials that emit in the blue and
green. Recently, Nichia in Japan have announced lasing action in GaN-based
diodes. Quantum well structures are key to all these results, offering higher
brightness, narrower EL linewidths, and a wider spectral range. In order for
the III-Nitride technology to develop, the material growth technique must offer
high volume at low cost in addition to the requisite device performance. To
date, only MOVPE has demonstrated this capability. We have previously reported
the growth of GaN, InGaN, and AlGaN layers by MOVPE in a multi-wafer,
high-speed rotating disk reactor. Both n- and p-doping and high quality optical
properties have been achieved. In this paper we extend this earlier work and
present results of the performance of InGaN / (Al)GaN quantum well structures.
Intense PL spectra were observed in the violet and blue regions. The thinnest
wells show evidence from PL and DCXRD measurments of either discontinuous
layers (islands) or a diffuse upper interface, with preliminary TEM results
showing the latter to be the most likely. We also report excellent uniformity
of these quantum well structures, and show electroluminescence from a SQW diode
emitting at 473 nm.
