Raman Determination of the Phonon Deformation Potentials in 
-GaN
F. Demangeot, J. Frandon, M. A. Renucci
Laboratoire de Physique des Solides de Toulouse, Universite Paul Sabatier
Olivier Briot, Bernard Gil, Roger-Louis Aulombard
Groupe d'Etude des Semiconducteurs, GES-CNRS
This article was received on June 4, 1996 and
accepted on October 24, 1996. Abstract
Raman spectroscopy is used to study the effect of the built-in
biaxial stress on the E2 and A1 (LO) q=0 phonon modes of wurtzite GaN layers
deposited by metal organic vapor phase epitaxy on (0001) sapphire substrate. By
means of phonon frequency shifts, the biaxial pressure coefficients of the mode
frequencies are determined and used to calculate the corresponding deformation
potentials. Stress calibration has been performed using reflectance data.
