Evidence for Shallow Acceptor Levels in MBE Grown GaN
B. G. Ren
Department of Electrical and Electronic Engineering, University of Nottingham
and
Department of Physics, University of Nottingham
J. W. Orton
Department of Electrical and Electronic Engineering, University of Nottingham
T. S. Cheng
Department of Physics, University of Nottingham
D. J. Dewsnip, D. E. Lacklison
Department of Electrical and Electronic Engineering, University of Nottingham
C. T. Foxon
Department of Physics, University of Nottingham
C. H. Malloy, X. Chen
Department of Physics and Astronomy, University of Wales
This article was received on Monday, June 3, 1996 and
accepted on Thursday, October 24, 1996. Abstract
We report the results of photoluminescence measurements on a number
of GaN thin films grown by MBE on GaAs (111)B substrates. In particular, we
draw attention to a new observation of a line at approximately 3.40eV which is
accompanied by complex fine structure and interpret it as due to a
donor-acceptor (DA) transition. Assuming a donor energy of 30meV, we derive an
acceptor binding energy of approximately 80meV which is very much smaller than
the accepted value of 250meV for the well established Mg acceptor. However, our
result is in agreement with a recent estimate of the hydrogenic acceptor energy
as being 85meV.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 22(1996).
last updated Wednesday, October 14, 1998 6:54:31 PM.© 1996-1998 The Materials Research Society
