Epitaxial growth of cubic GaN and AlN on Si(001)
A. Barski, U. Rössner, J. L. Rouviere, M. Arlery
CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée/SP2M
This article was received on Monday, June 3, 1996 and
accepted on Thursday, October 24, 1996. Abstract
Thermal treatment under propane at 1300-1400 °C has been used
to prepare Silicon (001) wafers for subsequent growth of cubic GaN and AlN by
Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECRMBE).
Thermal treatment of Silicon wafers under propane, used in this experiment,
produced a very thin (40 Å) layer of cubic SiC on the Silicon (001)
surface. Despite an extremely low thickness of as-produced SiC layer, high
quality cubic GaN has been successfully grown. The cubic form of AlN grown on
the SiC(40Å)/Si(001) surface has also been observed despite a very high
density of stacking faults.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 21(1996).
last updated Monday, November 9, 1998 11:00:51 PM.© 1996-1998 The Materials Research Society
