Free Excitons in GaN
B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li
Department of Physics and Measurement Technology, Linköping University
H. Amano, I. Akasaki
Department of Electrical and Electronic Engineering, Meijo University
This article was received on June 3, 1996 and
accepted on July 8, 1996. Abstract
Optical spectra on free exciton properties for GaN are presented and
discussed, in particular the influence of epitaxial strain and temperature. The
exciton-phonon coupling is also manifested via the temperature dependence of
the LO phonon replicas of the free exciton.
Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 2(1996).
last updated October 28, 1997 10:03:44 AM.© 1996-1997 The Materials Research Society
