GaN m-i-n LED grown by MOVPE
Da-cheng Lu, Xianglin Liu, Du Wang, Xiaohui Wang, Lanying Lin
Laboratory of Semiconductor Materials Science, Insitute of Semiconductors, Chinese Academy of Sciences
This article was received on June 4, 1996 and
accepted on October 21, 1996. Abstract
Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and
Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been
fabricated. They can be operated at forward bias less than 5 volts. The EL peak
wavelength was from 455 nm to 504 nm. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 18(1996).
last updated October 29, 1997 12:07:49 PM.© 1996-1997 The Materials Research Society
