Alternative N precursors and Mg doped GaN grown by MOVPE


B. Beaumont, M. Vaille, P. Lorenzini, Pierre GIBART
Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS

T. Boufaden, B. el Jani
Faculté des Sciences de Monastir, Tunisie.

This article was received on Monday, June 3, 1996 and accepted on Wednesday, October 16, 1996.

Abstract

In this paper, we address two different aspects relevant to the growth of GaN. The first part concerns alternative nitrogen source whereas in the second part, we report experimental results on Mg doping. Several nitrogen precursors have been used for the growth of GaN in MOVPE. To produce active species from N2 or NH3, a remote Plasma Enhanced Chemical Vapour Deposition (RPECVD) process has been implemented. In addition, nitrogen organic precursors, triethylamine and t-butylamine were also used. To accurately control the critical parameters of the MOVPE of GaN, we have implemented a laser reflectometry, which allows a real time in situ monitoring of the different steps of the growth. MeCp2Mg was used as Mg precursor for the p doping study. The dependence on the partial pressure of Mg precursor of dopant incorporation, electrical activity and growth rate are reported.

Outline

  • Introduction
  • Experimental
  • Alternative nitrogen sources
  • Plasma Activated sources
  • Alternative nitrogen precursors
  • GaN doping with magnesium
  • Incorporation of Mg in the GaN lattice
  • Electrical assessment
  • Conclusions
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 17(1996).

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