E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, I. Brener
Bell Laboratories, Lucent Technologies
) ZnO substrates to
induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO
substrates can be easily and unambiguously determined by measuring the sign of
the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO
and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both
Ga and N faces. The most striking difference is the doping behavior of the two
faces. Growth on the Ga-face is characterized by a higher carrier concentration
and a lower threshold for Ga droplet formation.© 1996-2004 The Materials Research Society