Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN


L. Bellaiche
National Renewable Energy Laboratory

K. Kunc, M. Besson
CNRS and Université P. and M. Curie

This article was received on June 3, 1996 and accepted on October 7, 1996.

Abstract

The pressure variation of the bandgap, at the isostructural phase transition of wurtzite InN, is determined theoretically, using the first-principles total-energy pseudopotential method. It is found that the bandgap (as well as the structural parameters) exhibit three different types of behavior, in three regions of pressure. Optical experiments at low temperatures could then be employed to directly identify the two different wurtzite phases of InN.

Outline

Linked Pages

Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 14(1996).

last updated January 7, 1998 10:28:47 AM.

© 1996-1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
ISBN links