MIJ-NSR Vol. 1, Art. 13, H. Teisseyre et al.

Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

This article was received on Tuesday, June 4, 1996 and accepted on Tuesday, September 24, 1996.

Abstract

GaN epitaxial layers on GaN single crystals were grown using molecular beam epitaxy with an NH₃ source. The deposited layers were examined by high resolution x-ray diffraction and photoluminescence (PL) spectroscopy. We observed strong and extremely narrow (half-widths of 0.5 meV) lines related to the bound excitons. In the higher energy range we observed three strong lines. Two of them are commonly attributed to free exciton transitions A (3.4785 eV) and B (3.483 eV). Their energetic positions are characteristic of strain-free GaN material.

Outline

Introduction

Experimental results

Discussion and Conclusions

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 13(1996).

last updated Tuesday, October 6, 1998 12:17:47 AM.