This article was received on Monday, July 1, 1996 and
accepted on Monday, September 23, 1996.
Abstract
GaN(0001) has been grown on Al2O3 (0001) by
molecular beam epitaxy where NH3 was used as the nitrogen
precursor. Desorption mass spectroscopy and reflection high energy electron
diffraction (RHEED) were used to monitor the relationship between growth rate
and the incident fluxes during growth. Excess surface Ga decreases the GaN
formation rate when the substrate temperature is too low or the Ga flux is too
high. A simple rate equation is used to describe the observed
behavior.
