Growth and Doping of AlGaN Alloys by ECR-assisted MBE
D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas
Department of Electrical and Computing Engineering and Center for Photonics Research
This article was received on and
accepted on September 16, 1996. Abstract
We report the growth of AlxGa1-xN alloys on
(0001) sapphire by the method of Electron Cyclotron Resonance-assisted
Molecular Beam Epitaxy (ECR-MBE). The films were doped n-type with silicon at
carrier concentration levels from 1016 to 1019
cm-3. SEM studies reveal smooth surface morphology consistent with
the observed 3x4 surface reconstruction in the RHEED pattern. Independent
determination of the Al-concentration and the lattice constant of the alloys
shows that Vegard's rule is obeyed in the pseudo-binary GaN-AlN system.
The bandgap of the alloys, determined by transmission and photoluminescence
measurements, was found to depend linearly on
Al-concentration.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 1, 10(1996).
last updated January 6, 1998 1:24:30 PM.© 1996-1998 The Materials Research Society
