Volume 1

S. Strite, Co-Editor in Chief

C. R. Abernathy, Co-Editor in Chief

Published 1996. A keyword index and an author index are also available.

1. ScAlMgO₄: an Oxide Substrate for GaN Epitaxy

E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N. E. Buchanan, E. H. Hartford.
2. Free Excitons in GaN
B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki.
3. Study of GaN films grown by metalorganic chemical vapour deposition
W. Van der Stricht, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush.
4. Research on GaN MODFET's
L. Eastman, J. Burm, W. Schaff, M. Murphy, K. Chu, H. Amano, I. Akasaki.
5. Surface morphology of as grown and annealed bulk GaN crystals
G. Nowak, S. Krukowski, I. Grzegory, S. Porowski, J. Baranowski, K. Pakula, J. Zak.
6. The Morphology and Cathodoluminescence of GaN Thin Films
C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell.
7. Yellow Band and Deep levels in Undoped MOVPE GaN.
Fernando J. Sanchez, D. Basak, M. A. Sanchez-García, E. Calleja, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, B. Beaumont, P. Lorenzini, P. Gibart, T.S Cheng, C. T. Foxon, J. W. Orton.
8. Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, Robert F. Davis.
9. Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, Pierre Gibart .
10. Growth and Doping of AlGaN Alloys by ECR-assisted MBE
D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas.
11. Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura .
12. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
Devin Crawford, Ruediger Held, A. M. Johnston, A. M. Dabiran, Philip I. Cohen .
13. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, S. Porowski, M. Mayer, A. Pelzmann, Markus Kamp , K. J. Ebeling, G. Karczewski.
14. Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
L. Bellaiche, K. Kunc, M. Besson.
15. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
H.Angerer, O. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, M. Stutzmann.
16. Growth of Ga-face and N-face GaN films using ZnO Substrates
E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, I. Brener.
17. Alternative N precursors and Mg doped GaN grown by MOVPE
B. Beaumont, M. Vaille, P. Lorenzini, Pierre Gibart , T. Boufaden, B. el Jani.
18. GaN m-i-n LED grown by MOVPE
Da-cheng Lu, Xianglin Liu, Du Wang, Xiaohui Wang, Lanying Lin.
19. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
S. Christiansen, M. Albrecht, W. Dorsch, H. P. Strunk, C. Zanotti-Fregonara, G. Salviati, A. Pelzmann, M. Mayer, Markus Kamp , K. J. Ebeling.
20. Recent Results in the Crystal Growth of GaN at High N₂ Pressure
I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski.
21. Epitaxial growth of cubic GaN and AlN on Si(001)
A. Barski, U. Rössner, J. L. Rouvière, M. Arlery.
22. Evidence for Shallow Acceptor Levels in MBE Grown GaN
B. G. Ren, J. W. Orton, T. S. Cheng, D. J. Dewsnip, D. E. Lacklison, C. T. Foxon, C. H. Malloy, X. Chen.
23. Raman Determination of the Phonon Deformation Potentials in -GaN
F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil, Roger-Louis Aulombard.
24. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall.
25. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
M. Leroux, B. Beaumont, N. Grandjean, Pierre Gibart , J. Massies, J. P. Faurie.
26. MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
H. Jürgensen, D. Schmitz, G. Strauch, E. Woelk, M. Dauelsberg, L. Kadinski, Yu. N. Makarov.
27. Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
S. Krukowski.
28. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
Bedwyr Humphreys, Matthew Govett.
29. GaN Based p-n Structures Grown on SiC Substrates
V.A. Dmitriev.
30. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
J. A. Majewski, M. Städele, P. Vogl.
31. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm, R. A. Talalaev.
32. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
T. S. Cheng, C. T. Foxon, N. J. Jeffs, O. H. Hughes, B. G. Ren, Y. Xin, P. D. Brown, C. J. Humphreys, A. V. Andranov, D. E. Lacklison, J. W. Orton, M. Halliwell.
33. Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot.
34. In-depth Analysis of the Impurities in GaN
A. P. Kovarsky, V. S. Strykanov.
35. Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.
36. High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
A. Y. Polyakov, M. Shin, D. W. Greve, M. Skowronski, R. G. Wilson.
37. Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
Jin Seo Im, Volker Härle, Ferdinand Scholz, Andreas Hangleiter .
38. Fabrication of GaN mesa structures
K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin, I.P. Nikitina, V.A. Dmitriev.
39. High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
J. I. Pankove, M. Leksono, S. S. Chang, C. Walker, B. Van Zeghbroeck.
40. Determination of the dislocation densities in GaN on c-oriented sapphire
A. Pelzmann, M. Mayer, C. Kirchner, D. Sowada, T. Rotter, Markus Kamp , K. J. Ebeling, S. Christiansen, M. Albrecht, H. P. Strunk, B. Holländer, S. Mantl.
41. Metal Contacts on -GaN
T. U. Kampen, W. Mönch.
42. Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
Philippe Vermaut , P. Ruterana, G. Nouet, A. Salvador, H. Morkoç.
43. Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
E. L. Piner, F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair, N. A. El-Masry.
44. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
U. Strauss, H. Tews, H. Riechert, R. Averbeck, M. Schienle, B. Jobst, D. Volm, T. Streibl, B. K. Meyer, W. W. Rühle.
45. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov, N.I. Kuznetsov, I.P. Nikitina, A.S. Zubrilov, D.V. Tsvetkov, V. I. Nikolaev, V.A. Dmitriev, V.A. Soloviev.
46. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
Alexey V. Dmitriev, Alexander L. Oruzheinikov.